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A depth profile analysis of SiO2 glass ion implanted with 23Na+ was carried out on a time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) with OX, Cs and buckminsterfullerene (C60) ion sputtering. The Na migration in SiO2 glass during both analysis process and sputter process was investigated under the various operating conditions. During the analysis process, 23Na+ intensity stayed constant...
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