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Amorphous magnetic CoFeB ultrathin films have been synthesized on the narrow band gap semiconductor InAs(100) surface, and the nature of the interface magnetic anisotropy and electrical contact has been studied. Angle-dependent hysteresis loops reveal that the films have an in-plane uniaxial magnetic anisotropy (UMA) with the easy axis along the InAs [0-11] crystal direction. The UMA was found to...
The influence of the total thickness (periods of AlN/GaN SLs) of AlN/GaN superlattices (SLs) buffer on the static electrical properties of AlGaN/GaN HFETs is study for the purpose of improving device's breakdown voltage (BV) and reducing its on-resistance (RON). It is found that for top-GaN layer with a constant thickness of lμm, a proper thickness of AlN/GaN SLs buffer (such as 2.5 μm with 100 period...
In this paper, the leakage path and breakdown behavior of GaN on silicon substrate were studied systematically. Three terminal breakdown voltage characteristics of the samples with various ohmic contacts spacing were evaluated. With increasing the spacing between the contacts, the breakdown voltage increased linearly first and then saturated. In order to clarify the breakdown behavior, leakage path...
We demonstrate selectively-grown GaAs nano/micro structures on silicon substrates by molecular beam epitaxy. Hexagonal or rectangular shaped GaAs crystals, depending on the orientation of the silicon substrate, were formed inside the silicon-dioxide-masked nanoholes at 630°C. Clear facets, which are the low-energy {011} planes, indicate single-crystalline nature of the growth. GaAs/InAs/GaAs structure...
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