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Point defects introduced by homoepitaxial growth of thin films on SrTiO3 substrates were studied by means of positron annihilation. The SrTiO3 films were grown by molecular-beam epitaxy (MBE) without using an oxidant. The line-shape parameter S was found to be increased by the growth of the film, which was attributed to the diffusion of oxygen from the substrate into the film, and the resultant introduction...
GaP-based InAs quantum dots (QDs) on a thin GaP1-xNx buffer layer grown by the low-pressure metalorganic chemical vapor deposition were investigated by the atomic force microscopy. The InAs dot density was significantly increased from 2.6 times 109 cm-2 to 2.0 times 1010 cm-2 with increasing the nitrogen composition of the GaP1-xNx from x = 0 to 4.5. The InAs QDs grown on GaP and GaPN with various...
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