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This paper proposes a novel cylindrical double gate In0.53Ga0.47As vertical Nanowire n type device, which offers a higher drive current, better channel potential controllability and reduced short channel effects at ultra-short channel length 14nm through numerical simulation approach. An independent inner gate control is used for threshold voltage tuning. Improvement of drive current in the Double-Gate...
This paper proposes a novel gate-all around (GAA) triangular channel horizontal nanowire field-effect transistor (HNWFET) for future low power memories. As the cross-sectional dimensions of nanowire channel are very small, an enhanced electrostatic controllability and carrier mobility characteristics are achieved. Ion, Ioff and the ratio Ion/Ioff have been chosen as the figure of merit to optimize...
Static Random Access Memory (SRAM) is the most popular circuit which is used in all processors and occupies the considerable area of the chip. The total power consumption of circuit is largely dependent on power dissipated by memory. There were several efforts for reduction in power consumption such as Power Gated SRAM circuits and increasing virtual ground voltage. The previous techniques were capable...
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