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Binary information encoded within the spin of carriers can be transferred into corresponding right or left-handed circularly polarized photons emitted from an active semiconductor medium via carrier-photon angular momentum conversion. In order to attain maximized spin-injection at out-of-plane magnetic remanence, a number of material systems have been explored as possible solid-state spin injectors...
In this paper, we have demonstrated that cryogenic implantation applied to source and drain (SD) extension, pocket/halo and SD formation offers advantages for higher core and SRAM driving current and one order lower Ioff bulk (Ioffb) leakage in NMOS with reduced SRAM defectivity. Atomistic Kinetic Monte Carlo (KMC) modeling confirms that the cryo-implantation has enabled a unique control of active...
Diamond-like carbon (DLC) and TiAlSiCN nanocomposite coatings were synthesized and annealed at different temperatures in a vacuum environment. The microstructure, hardness and tribological properties of as-deposited and annealed DLC–TiAlSiCN nanocomposite coatings were characterized by X-ray diffraction, X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), Raman spectroscopy,...
The conjugated polymer blending system has been attracting much attention in recent years due to their potential applications in optoelectronic devices, thin-film transistors, and photovoltaic devices with many advantages like easy preparation, low-cost, and the possibility to fabricate flexible devices for large area applications. In this study, Conjugated polymer Poly(9,9'-n-dioctylfluorene-alt-bithiophene)...
The quest for technologies beyond the 15 nm node complementary metal-oxide-semiconductor (CMOS) devices has now called for research on alternative channel materials such as Ge and III-V compound semiconductors with inherently higher carrier mobility than those of Si. Intensive effort has been made on GaAs nMOS devices owing to GaAs's superior electron mobility and its lattice parameter close to that...
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