The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Recently, there is an increasing interest in exploiting antiferromagnet (AFM) as an active element in spintronic devices arising from its advantages of negligible shape anisotropy and good thermal stability as compared to its ferromagnet (FM) counterpart. To reap these benefits of AFM, however, one must find a viable way to obtain sizable output signal from AFM and an efficient mechanism for reorienting...
The FeRh alloy has been the subject of many experimental and theoretical studies over the last fifty years.[1-3] This interest is primarily due to the observation that the near-equiatomic phase of FeRh possesses a chemically ordered CsCl-type structure which exhibits an abrupt antiferromagnetic (AFM) to ferromagnetic (FM) transition with heating to a transition temperature of around 350K in the bulk...
The magnetic properties and magnetocaloric effects (MCEs) have been investigated in ErSi compound, which crystallizes in the orthorhombic CrB-type structure. This compound is antiferromagnetic (AFM) with a Néel temperature of 12.5 K. The measurements of the temperature and field dependences of the magnetization clearly show that the ErSi compound undergoes a field-induced metamagnetic transition...
The magnetic properties, in particular, the thickness dependence of the magnetization of ultrathin Fe3O4 films grown on GaAs(100). The in-plane hysteresis loop from the VSM were measured for samples with various thickness in different field orientation. In the directions of [011 ] and [001 ], the remanence ratio increases with increasing film thickness and more distinctly during the change from 6...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.