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Age-dependent dielectric properties of tissues have been calculated based on a number of interpolation equations in the frequency range of 0.4–10GHz. The proposed method for calculating age-dependent dielectric properties is based on mapping the existing measured data [1] for pigs to those of humans using weight/age plots. The method provides growth curves relating the dielectric properties of both...
In this paper, the reliable SiNx/AlGaN/GaN MISHEMTs on silicon substrate with improved trap-related characteristics have been well demonstrated. The devices with our proposed treatment method showed less deep-level traps and more Si surface donors at SiNx-AlGaN interface. The trap related device characteristics are also improved by using our optimized treatment method. The devices with proposed treatment...
The dielectric spectroscopy of an impregnated paper and a type of vegetable oil was measured in the frequency domain. In order to investigate the effect of aging on the dielectric response, accelerated thermal aging was conducted on the paper samples and oils samples, respectively. Their dielectric responses were measured at intervals throughout the aging process. Since moisture has a great influence...
Extraction of vegetation water content and soil moisture from microwave observations requires development of a high fidelity scattering model. A number of factors associated with the vegetation canopy and with the underlying bare soil should be taken into account. In this paper, we propose an electromagnetic scattering model for a corn canopy which includes the coherent effect due to the corn structure...
As the current-carrying capability of a copper line is reduced due to interconnect dimension shrinkage, self-aligned CoWP metal-cap has been reported to be helpful to improve degraded electromigration (EM) reliability. However, adoption of the metal cap in general further exacerbates the already problematic low-k dielectric TDDB reliability at 32nm and beyond. This paper provides a comprehensive study...
We report, for the first time, the reliability issues of tunneling field-effect transistors (TFETs) by experiments. We observed that the overall reliability performance of n-TFETs is very different from those of the conventional n-MOSFET. The degradation of n-TFETs under positive bias temperature instability (PBTI) stress is very large compared with the negligible degradation for the conventional...
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