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Although high-performance inversion-mode InGaAs NMOSFETs are demonstrated, high performance GaAs MOSFETs with directly deposited high-k dielectrics remain a big challenge. Some researchers believe that Fermi-level of GaAs is intrinsically pinned at the mid-gap with directly deposited ALD AI2O3 In this paper, we systematically study the electrical properties of ALD AI2O3 NMOSCAPs, PMOSCAPs, NMOSFETs...
High-performance inversion-type enhancement-mode n-channel MOSFETs on In-rich In0.75Ga0.25As using ALD Al2O3 as high-k gate dielectrics are demonstrated. The maximum drain current, peak transconductance, and the effective electron velocity of 1.0 A/mm, 0.43 S/mm and 1.0times107 cm/s at drain voltage of 2.0 V are achieved at 0.75-mum gate length devices. The device performance of In-rich InGaAs NMOSFETs...
Carbon nanotubes (CNTs) films were synthesized at low pressure using nickel as catalyst by thermal chemical vapor deposition with hydrogen-acetylene mixture. The Raman characteristics and morphological features of CNTs at different substrate temperatures were investigated. The variation of CNTs morphological feature mainly depends on the substrate temperatures. In the low temperature range (450-550degC),...
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