The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
High‐density memory is integral in solid‐state electronics. 2D ferroelectrics offer a new platform for developing ultrathin electronic devices with nonvolatile functionality. Recent experiments on layered α‐In2Se3 confirm its room‐temperature out‐of‐plane ferroelectricity under ambient conditions. Here, a nonvolatile memory effect in a hybrid 2D ferroelectric field‐effect transistor (FeFET) made of...
In article number 1808606, Jianyong Xiang, Hualing Zeng, and co‐workers present a prototype ferroelectric field‐effect transistor consisting of van der Waals interacted atomic layers only. The non‐volatile functionality stems from ultra‐thin α‐In2Se3, an emergent two‐dimensional ferroelectric semiconductor. The binary logic bit “0” and “1” can be encoded and stored in the device with the out‐of‐plane...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.