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a 12 bit 300 MS/s ADC with 78-dB SFDR in 0.18um SiGe BiCMOS process is presented. Such ADC consumes 170 mW under the supply of 1.9V. To improve the power efficiency and settling accuracy, the ADC employs a novel residue amplifier (RA). In addition, it includes a clock buffer to generate the low jitter clock from the signal source outside the chip. Reference buffer is fully integrated to provide stable...
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