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This paper reports a normally-off high voltage hybrid Al2O3/GaN gate-recessed MOSFET fabricated on silicon substrate. The normally off operation was implemented by digital gate recess using an oxidation and wet etching based AlGaN barrier remove technique. The Al2O3/GaN MOSFET features a true normally off operation with a threshold voltage of 2 V extracted by the linear extrapolation of the transfer...
Due to the thermal mismatch between GaN and Si, GaN grown on Si at elevated temperatures (~1100 °C) usually exhibits large internal residual stress. Therefore, the characterization of residual stress in GaN on Si substrate is of particular importance. In this work, a type of reliable bent-beam strain sensor was used to estimate residual stress in suspended GaN microstructures. The device was modeled...
In this paper, vertically AlN nanocone arrays have been successfully fabricated at 550degC. They are all single crystals with a wurtzite structure and grow along [0001] orientation. These AlN nanocones are found to have good field emission behaviors, suggesting they could be excellent cathode nanomaterials in future.
ZnO acicular nanostructure was designed and grown from aqueous solution on the conductive substrate. The diameter of ZnO was 50 nm and length was about 5 mum. due to the large aspect ratio, the as-prepare ZnO sample was applied in filed emission with turn-on electric intensity of 3.2 V/mum and enhancement factor beta of 2830.
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