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Enhanced electroluminescence (EL) has been achieved from the light-emitting devices containing Si quantum dots/SiO2 multilayers deposited on Si nanowire arrays because of the good antireflection characteristics of Si nanowire structures, which improves the light extraction efficiency. However, it is found that the EL is first enhanced with increasing the depth of the Si nanowires and then reduced...
This paper reports a normally-off high voltage hybrid Al2O3/GaN gate-recessed MOSFET fabricated on silicon substrate. The normally off operation was implemented by digital gate recess using an oxidation and wet etching based AlGaN barrier remove technique. The Al2O3/GaN MOSFET features a true normally off operation with a threshold voltage of 2 V extracted by the linear extrapolation of the transfer...
Due to the thermal mismatch between GaN and Si, GaN grown on Si at elevated temperatures (~1100 °C) usually exhibits large internal residual stress. Therefore, the characterization of residual stress in GaN on Si substrate is of particular importance. In this work, a type of reliable bent-beam strain sensor was used to estimate residual stress in suspended GaN microstructures. The device was modeled...
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