The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We demonstrate a high output power passively mode-locked distributed Bragg reflector laser with integrated tapered semiconductor optical amplifier, operating at 1.5 . These devices are based on an optimized low-optical-confinement AlGaInAs/InP epitaxial material with a three quantum wells active region and a passive far-field reduction layer. The device generates nearly transform-limited...
We report 40 GHz passively mode-locked 1.55 μm AlGaInAs/InP lasers with integrated tapered semiconductor optical amplifiers producing nearly transform limited pulses with a pulse width of 4.3 ps and average output power of 200 mW.
We report 40 GHz passively mode-locked 1.55 µm AlGaInAs/InP lasers with integrated semiconductor optical amplifiers producing nearly transform limited pulses with a pulse width of 4 ps and a peak power over 550 mW.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.