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Epitaxial YBa2Cu3O7-delta was formed by processing of laser-ablated, fluorine-free precursor films. The depositions were conducted at room temperature in low oxygen pressure on LaAlO3(LAO) single crystal substrates. Processing was done in the same deposition chamber by heating the precursor film to reaction temperatures of 750-850degC in a reducing gas ambient, and then raising the oxygen pressure...
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