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Low reverse recovery charge and low turn-on voltage AlGaN/GaN Schottky barrier diodes were fabricated on a 6-inch Si (111) substrates using a recessed anode and N2O plasma-oxidized AlON compound spacer. The N2O plasma-treated areas at the anode edge were oxidized because the AlON passivation layers and spacers under the field plate metals formed a favorable interface with the GaN layer that reduced...
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