The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We have developed a prototype of a 3 kV/200 A SiC hybrid module, which is equipped with Si IGBTs and SiC Schottky barrier diodes. We achieved a reduction in the recovery loss and turn‐on loss by using an SiC hybrid module and decreasing the turn‐on time by lowering the gate resistance. Moreover, we estimated that the total energy loss in the converter and inverter was reduced to approximately 30%...
We have developed SiC-Schottky barrier diodes with a JBS structure that have characteristics of low forward voltage and low leakage current at 3 kV. Further, we have built a prototype of a 3 kV/200 A SiC hybrid module, equipped with Si-IGBTs and SiC-Schottky barrier diodes. We have achieved to reduce the recovery loss and the turn-on loss, by using the SiC hybrid module and a high-speed drive circuit...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.