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The viability of ultrathin amorphous Ti–Al film (∼4 nm) as a diffusion barrier layer between Cu and Si for the application in Si-based ultra-large scale integration (ULSI) has been investigated. The Cu/Ti–Al/Si heterostructures are annealed in a high vacuum at various temperatures. There is no impurity peaks in the X-ray diffraction patterns for the samples up to annealing temperature of 800 ∘C, although...
We report fabrication of CuS particles with solid, hollow, spherical and tubular structures in a simple aqueous system under microwave irradiation, employing CuSO4 and Na2S2O3 as the starting materials without assistance of any surfactant or template. Energy-dispersive X-ray analysis and an X-ray powder diffraction pattern proved that the product is hexagonal CuS phase. The morphologies of the product...
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