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High Ge concentration Si:Ge solar cell based on low cost Si substrate fabricated by RTCVD can be applied in multi-junction solar cell system to absorb infrared light. First principle design shows that ideally Si:Ge solar cell with 90% Ge concentration can contribute 6.2% efficiency with 16.6mA/cm2 Jsc, 472mV Voc and 79.5% FF to a multi-junction solar cell system with a 300um silicon solar cell on...
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