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We compare GaAs and GaN for IR detection using extremely non-degenerate two-photon absorption. While the small gap material has larger ND-2PA and hence better sensitivity to IR, unwanted background from degenerate 2PA outweighs this advantage.
Using extremely nondegenerate photons in frequency (energy ratios >10/1), we measure 2–4 orders of magnitude enhancement of two-photon absorption in semiconductors compared to the degenerate case. We demonstrate sub-femtosecond gated detection directly on semiconductor diodes.
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