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In this paper we focus on activation and diffusion during annealing of silicon after implantation into Mg‐doped GaN epitaxial layers. The Si diffusion was analyzed for different capping materials and compared to an uncapped sample. Investigation of the Si concentration obtained from secondary ion mass spectroscopy (SIMS) and comparison with calculation revealed several diffusion constants. Different...
AlGaN/GaN‐based normally‐off GaN MOSFET with stress controlled 2DEG source and drain was proposed and fabricated using Al2O3 gate oxide deposited on the fully recessed gate region. The proposed normally‐off Al2O3/GaN MOSFET utilized AlGaN/GaN heterostructure source and drain with extremely high 2DEG density of 1.87×1014 cm2 with mobility of 120 cm2V‐1s‐1 and the device results were compared to those...
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