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The Ga-In-As-Sb-C-H system composed of 8 phases and 74 gaseous species is set up and analyzed thermodynamically to simulate the metalorganic vapor-phase epitaxy (MOVPE) process for (Ga,In)(As,Sb) semiconductor growth. Several phase diagram sections and the composition dependences of semiconductors on the amount of input III-V sources are calculated with the conditions defined according to the practical...
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