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In this work we present results regarding growth of AlGaN/GaN/Si(111) HEMTs for integration of high frequency microelectronics with a silicon platform. GaN buffers with thicknesses above 1μm were grown using one or two low temperature LT-AlN interlayers. The impact of the number of LT-AlN interlayers as well as the influence of the V/III ratio during growth of the GaN buffer, on the surface morphology...
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