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Due to scaling of traditional MOS devices into nanometer range, the constraints like power and performance restrict its lastingness in future circuit design. The trigate FinFET has emanated as propitious device for better electrostatic characteristics in terms of Short Channel Effects (SCEs) etc. In this work, the design and analysis of 5-fin SOI FinFET at 20nm technology has been done using 3 Dimensional...
FinFETs are considered as superior alternative to conventional MOSFETs for short channels. Presence of gate on multiple sides helps in performance enhancement. In this work, we have investigated the impact of various process parameters like gate oxide thickness (Tox), aspect ratio of fin height (Hfin) to fin thickness (Wfin) on the performance of Tapered FinFETs for 20 nm gate length. This FinFET...
The superior material properties such as higher breakdown field, thermal conductivity and wider bandgap make Silicon Carbide (SiC) appropriate for transistor applications. However, there are certain parameters where SiC have yet to achieve required performance levels. SiC have number of polytypes having mature technology. Being one of the SiC polytypes, 3C-SiC has higher mobility and saturation velocity...
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