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We demonstrated an excellent output power (Pout) density performance using a novel InAlGaN/GaN-HEMT with an 80-nm gate for a W-band amplifier. To eliminate current collapse, a unique double-layer silicon nitride (SiN) passivation film with oxidation resistance was adopted. The developed discrete GaN-HEMT achieved a Pout density of 3.0 W/mm at 96 GHz, and we fabricated W-band amplifier MMIC using the...
High performance MHEMTs using (InxGa1-xAs)m/(InAs)n superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80 nm gate length exhibit high drain current density of 392 mA/mm at drain bias 1.0 V and transconductance of 991 mS/mm at drain bias 1.2 V. Comparison with regular InxGa1-xAs channel, the superlattice channel HEMTs show an outstanding performance because...
80-nm high electron mobility transistors (HEMTs) with different indium content in InxGa1-xAs channel from 52%, 70% to 100% have been fabricated. Device performance degradation were observed on the DC measurement and RF characteristics caused by impact ionization at different drain bias, >0.8 V (InAs/In0.7Ga0.3As), >1 V (In0.7Ga0.3As) and >1.5 V (In0.52Ga0.48As), respectively. The impact ionization...
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