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It is important for shrinking the mesa width of a channel region in a vertical InGaAs channel MISFET for carrying out high-speed operation and for obtaining a steep sub-threshold slope. Therefore, we introduced selective undercut etching after the dry etching of the mesa structure. In the fabricated device with 60-nm-long channel, the channel mesa width became 15 nm. The maximum drain current density...
High performance MHEMTs using (InxGa1-xAs)m/(InAs)n superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80 nm gate length exhibit high drain current density of 392 mA/mm at drain bias 1.0 V and transconductance of 991 mS/mm at drain bias 1.2 V. Comparison with regular InxGa1-xAs channel, the superlattice channel HEMTs show an outstanding performance because...
We propose a vertical InGaAs MOSFET with hetero-launcher and undoped channel. In a previous trial of this particular MISFET innovation, the number of devices that achieved current modulation by gate bias was only 10% of the total number of the fabricated devices. This poor result was caused by loss of thickness of the gate dielectric. In the new version of this device, the gate stuck was fabricated...
An 80-nm InP HEMT with InAs channel and InGaAs sub-channels has been fabricated. The high current gain cutoff frequency (ft) of 350 GHz and maximum oscillation frequency (fmax) of 360 GHz were obtained at VDS = 0.7 V due to the high electron mobility in the InAs channel. DC and RF characterizations on the device have been performed and the on- sate breakdown voltage of the device was measured to be...
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