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Nanoindentation with in‐situ electrical characterization is used to investigate piezoelectric scandium aluminum nitride (ScxAl1−xN) thin films with Sc contents up to x = 0.3. The films are prepared by reactive magnetron sputtering using Al2O3 substrates with TiN seed layers as bottom electrodes at a substrate temperature of 400 °C. X‐ray diffraction shows c‐axis oriented wurtzite ScxAl1−xN, where...
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