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An MBE grown InGaAs metal semiconductor metal (MSM) photodiode (PD) with an InAlAs barrier enhancement layer is reported that has very low dark current and high speed characteristics. The detector using Cr/Au Schottky metal fingers with 4m spacing on a large active area of 300×300m2 shows a low dark current of 38nA at 10V. This corresponds to a dark current density of 0.42pA/m2 and is, to our knowledge,...
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