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This letter presents valuable remarks based on an extensive experimental study of the microwave behavior for a GaAs HEMT under CW infrared and visible laser exposure. The comparison of both dc and microwave (scattering and noise) parameters with and without illumination has highlighted that the device behavior is significantly affected by the light exposure. The observed optical effects can be ascribed...
In this work, the results of an extensive experimental analysis of on wafer AlGaAs/GaAs HEMT's under CW visible laser exposure are presented. The DC and 2–26.5 GHz small-signal performances of scaled gatewidth (100, 200, 300 µm) with and without illumination have been deeply investigated and compared with the results previously reported in the literature. In addition, the noise parameter variations...
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