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Ferroelectric domain walls provide a fertile environment for novel materials physics. If a polarization discontinuity arises, it can drive a redistribution of electronic carriers and changes in band structure, which often result in emergent 2D conductivity. If such a discontinuity is not tolerated, then its amelioration usually involves the formation of complex topological patterns, such as flux‐closure...
Ferroelectric domain walls are quasi‐2D systems that show great promise for the development of nonvolatile memory, memristor technology, and electronic components with ultrasmall feature size. Electric fields, for example, can change the domain wall orientation relative to the spontaneous polarization and switch between resistive and conductive states, controlling the electrical current. Being embedded...
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