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This work reports a comparison of high-k Al2O3/HfO2/Al2O3 dielectric stack Tunnel FETs with both vertical tunneling and lateral tunneling, as non-volatile memory (NVM) cells. Tunnel FET NVM are fabricated and characterized to evaluate their potential as low power memory operation. These memory cells can be programmed with voltages from −10V to −15V (p type devices) and show extremely stable memory...
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