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The operation of a pulse-charged spark gap that is triggered by gallium arsenide (GaAs) photoconductive semiconductor switches (PCSSs) was investigated. By measuring the currents with the streamer discharge, we analyzed the mechanisms of breakdown between the semi-insulating GaAs PCSS and the spark gap. Two similar combination setups were studied by different gap structures. It was shown that the...
The carrier gain mechanism is existed m the non-linear photoconductive semiconductor switches. The far-field temporal characteristics of terahertz radiation caused by biased Large-aperture non-linear photoconductive dipole antenna were studied according to current surge model which includes effects of quantum efficiency.
The paper introduced the rate equation to describe the carrier density of the GaAs photoconductive semiconductor switch (PCSS) medium. This solution leaded to a Pspice model for the switch using a time-varying resistor model. Analytical and experimental results were compared.
A semiclassical Monte Carlo model is presented to study the time-varying conduct current and displacement current in a terahertz photoconductive switch after photoexcitation.
This paper reports the experimental results of pulse-charged spark gap based on GaAs semiconductor photoconductive switches. With variation in the position and structure of spark gap, the electric characteristics of output waveforms are obtained and the breakdown mechanism in pulse-charged spark gap based on photoconductive switches is analyzed. Results imply that high current or ultrafast pulse could...
A streamer mode was proposed based on the gas discharge theory and the theory of optically activated charge domain in high gain gallium arsenide (GaAs) photoconductive switches (PCSS). The paper expounded the whole physical process that from the laser started to illuminate the material to the formation of the streamer. Note the critical conditions in which the streamer form and develop, comparing...
Transit space-charge waves effect in semi-insulating GaAs photoconductor are investigated by numerical simulation in this paper. The form process of space-charge waves is brought forth in the result of simulation.
Non-uniform illumination near the anode of photoconductive switch can produces ultra-fast electric pulse. As the rise of laser pulse power for more powerful electric pulse, the transient absorbability of anode descends along with process of electric absorbing. Indeed, a rejected electric field forms near the anode. To reduce this phenomenon and obtain more powerful ultra-fast electric pulse, electrode's...
The periodicity and weakening surge of GaAs Photoconductive Semiconductor Switches is analyzed. We think periodicity and weakening surge of the output current waveform is caused by self-excitation of the circuit. The electric field threshold and maintenance field of Gunn threshold electric field are modulated by the AC electric field; the output waveform became two main modes of trans-electron oscillator,...
In the experiment, we found that nonlinear photoconductive semiconductor switches (PCSS's) is triggered by lower energy laser pulse, that ultra-fast electric pulse of 200ps rising time and 500ps pulse width is obtained, and that frequency bandwidth is more than 6.0GHz. The switch and double ridges horn antenna are integrated and the receiving antenna is connected with the oscillograph and frequency...
The generation of triggered jitter-free ultra-fast electrical pulses is important in precise and ultra-fast bing bang control. Experiments of a lateral semi-insulating GaAs photoconductive semiconductor switch triggered by nanosecond laser pulse were reported. The switches were insulated by solid multi-layer transparent dielectrics. Jitter-free electrical pulse from the 1 mm-gap GaAs switches was...
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