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Medium energy ion scattering (MEIS) combining a toroidal electrostatic analyzer with an energy resolution (dE/E) of 4x10 -3 has been used for ultra-shallow depth profiling of As implanted into Si at 1, 2 and 5 keV to a dose of 1.2x10 15 ions/cm 2 before and after spike annealing at 1075 o C. Depth profiling results extracted from MEIS spectra were compared...
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