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Half-metallic nature has been experimentally reported for some Cobalt (Co)-based full Heusler alloys, such as Co2MnSi [1], Co2(Fe-Mn)Si [2], Co2Fe(Al-Si) [3]. As has been reported in references [2, 3], it is effective to tune the material composition using a “4th element” for maximizing the spin polarization of the conduction electron. At the same time, such a 4th element sometimes increases the exchange...
In this study, the degradation mechanism of the interface integrity between a hafnium dioxide thin film and a gate electrode thin film was investigated by using quantum chemical molecular dynamics. Effect of point defects such as excessive oxygen and carbon interstitials in the hafnium dioxide films on the formation of the interfacial layer between them was analyzed quantitatively. Though the defect-induced...
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