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Aluminum nitride (AlN) thin films grown on the Si (100) by radio frequency sputtering have been analyzed by X-ray diffractometry, scanning electron microscopy and transmission electron microscopy (TEM). The films of ∼3 μm thick exhibit the [0001] preferred growth direction where columnar AlN crystals are grown in a non-epitaxial pattern and aligned almost perpendicular to the SiO 2 –Si substrate...
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