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High-energy ion slicing is promising to produce the free-standing GaN films with thickness in the range of 10–20 µm, which would promote the mass applications of GaN substrates. In this paper, bulk GaN was implanted by 1.6 MeV H ions with the mean projected range Rp of around 17 μm and the thermal evolution of the H-induced defects was investigated in detail. Due to the migration-coalescence mechanism,...
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