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As the requirement of portable and smart devices rapidly increasing, applications of high performance 3D integration and M/NEMS packaging have enormous market potential. High speed in-line testing is a critical bottleneck for 3D SiP and TSV processes. In this paper, we promote a method of in-line testing for interconnection performance of TSV structures, and a novel 3D CPW model for performance testing...
The piezoresistive pressure sensor has been used to measure the dynamic pressure as well as in high temperature environment. In this paper, a novel TSV 3D packaged pressure sensor is proposed for high temperature environment and dynamic measurement. The pressure sensors and the silicon carrier with TSV are flip chip bonded using Au/Sn eutectic for hermetic encapsulation. In order to reduce the stress...
In this paper, a stacked SRAM chip module is presented and simulation results are demonstrated. A novel 3D integration process is presented and challenging issues are addressed. With this novel process, there's no need to do grinding/polishing of copper overburden after filling of TSV by copper electroplating. Copper microbumps will be formed directly on the active side in the filling of TSV by copper...
Three-dimensional (3D) die stacking based on the Through Silicon Via (TSV) is a promising new packaging technology for its high performance, multi functionality, relatively smaller chip size and lower cost etc. However, the application of TSV in 3D SiP will introduce lots of new problems regarding the reliability, such as thermal stress, deformation, fatigue failure In this study, the thermal-mechanical...
In this paper, the potential application of combining cylindrical TSV and annular TSV into 3D integration was studied. First, the schematic fabrication process of cylindrical and annular TSV was proposed. Lumped equivalent circuit model of these different kinds of TSV structures from the physical configuration were studied and verified. Besides, 3D full wave electromagnetic (EM) simulations of cylindrical...
TSV interposer provides a cost efficient solution way for 3D IC integration. In this paper, a TSV interposer technology is proposed for SRAM stacking. A simple fabrication process is developed for cost-sensitive application. The mushroomlike Cu/Sn bumps by copper overburden can be directly connected with other substrate, which eliminates a CMP planarization to improve the yield and reduce fabrication...
As multiple layers of planar device are stacked to alleviate signal delay problem and reduce chip area, Through silicon via (TSV) is introduced to replace the large number of long interconnects needed in previous 2D structure. However, the thermal-mechanical reliability problems of TSVs, such as interfacial delamination, via cracking and so on, have become a serious reliability concern. In this paper,...
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