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Al 2 O 3 , HfO 2 , and composite HfO 2 /Al 2 O 3 films were deposited on n-type GaN using atomic layer deposition (ALD). The interfacial layer of GaON and HfON was observed between HfO 2 and GaN, whereas the absence of an interfacial layer at Al 2 O 3 /GaN was confirmed using X-ray photoelectron spectroscopy and transmission electron...
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