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AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 4H-SiC (0001) vicinal substrates with vicinal angles of 0.4°, 1° and 2° inclined toward 〈101¯0〉, as well as 0° (just substrate) by radio-frequency plasma-assisted molecular beam epitaxy (rf-MBE). It was found that the mobility was enhanced by increasing the vicinal angle, particularly, the mobility in the sample grown on a...
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