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We investigated molecular carbon (C16H10) implant as a replacement for both a monomer carbon co-implant as well as a Ge pre-amorphization step for ultra-shallow junction (USJ) formation in a p-MOSFET SDE doping process in a 40 nm logic device. Carbon is often used in the p-FET extension sequence because it reduces transient enhanced diffusion (TED) by trapping silicon interstitials. However, a Ge...
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