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TEM dark-field off-axis electron holography technique was applied to study strain profile in bulk Si pMOSFETs with epitaxial SiGe selectively grown in source/drain are. Based on lattice displacement-induced electron wave phase shift, 2-D strain mapping (ε[110] and ε[001]) were retrieved. Strain variation due to sample thinning was evaluated. Results from dark-field holography technique was discussed...
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