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High‐temperature vapor phase epitaxy (VPE) has been proved ubiquitously powerful in enabling high‐performance electro‐optic devices in III–V semiconductor field. A typical example is the successful growth of p‐type GaN by VPE for blue light‐emitting diodes. VPE excels as it controls film defects such as point/interface defects and grain boundary, thanks to its high‐temperature processing condition...
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