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Our germanium on silicon avalanche photodiodes (Ge/Si APDs) show a 1310nm sensitivity of −22.5dBm at 25.78Gb/s, which is, to our knowledge, the best sensitivity in reported 25Gb/s avalanche photodiodes.
Our CMOS-foundry mass-produced Ge/Si optoelectronic devices have passed the high temperature accelerated aging test, THB test and HAST test, which demonstrate satisfactory reliability and promising potential for non-hermetic applications.
We developed world first 25Gb/s normal incident germanium silicon avalanche photodiode (Ge/Si APD) in a CMOS commercial foundry. The vertically illuminated Ge/Si APDs have a large 3-dB bandwidth (>18GHz) at a high gain (M=8) which is suitable for 100GBASE-ER4 application.
We demonstrate selectively grown Ge/Si avalanche photodetectors with a bandwidth of 10 GHz at gain = 8 at 1310 nm. The high bandwidth-gain-product of 80 GHz and Si monolithic integration capability offer great potentials for future applications.
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