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Focused Ion Beam Writing
In article number 2102708, Yang Tan, Feng Chen, and co‐workers present a new method to “print” lateral PN junctions in MoSe2/graphene bilayers via ion beam irradiation. Controllable, focused Ga+ ions generate Se‐defects on the top of the heterostructures and yield unique electronic properties. This work presents focused ions as an additional strategy for the direct‐writing...
Electronic devices based on 2D materials have exhibited outstanding figures of merit. However, the fabrication of 2D diodes still relies on manual or semi‐automated handling processing. To unleash their commercial potential, the integration of 2D materials into a fully‐automated fabrication line is a critical step. Here, the focused ion‐beam writing as an automated approach to construct lateral diodes...