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An a-IGZO thin-film phototransistor incorporating graphene absorption layer was proposed to enhance the responsivity and sensitivity simultaneously for photodetection from ultraviolet to visible regime. The spin-coated graphene dots absorb incident light, transferring electrons to the underlying a-IGZO to establish a photochannel. The 5 A/W responsivity and 1000 photo-to-dark current ratio were achieved...
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