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In this article, the authors developed a high-k HoTiO 3 gate dielectric deposited on Si (100) through reactive cosputtering. They found that the HoTiO 3 dielectrics annealed at 800°C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to the decrease...
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