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This letter reports the performance of a W-band (75-110 GHz) high gain double-balanced active up-conversion mixer fabricated in a low-cost 200 GHz f T and f max 0.18 μm SiGe BiCMOS technology. Integrated on-chip baluns are used at RF and LO ports to facilitate on-wafer characterization. The mixer achieves a measured single sideband (SSB) power conversion gain of 6.6 dB and 3.2 dB at 75 GHz and 80...
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