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This paper presents an analysis of different variations to contact the source of GaN power transistors in a package. Two variants relying on bondwires, and three variations using source vias are considered. Based on em simulations, equivalent circuits are determined for the package, which enables detailed analysis of cause and effect in the overall package performance. The focus of the investigation...
Modeling GaN transistors is still a matter of research. The technology is still quite young and not yet fully mature. A second issue is the fact that GaN transistors are commonly used as packaged power devices. This paper discusses modeling results obtained for different GaN devices from a small HEMT to a 60-W packaged power transistor. It is shown that the performance state-of-the art GaN HEMTs are...
Power transistors basically consist of a number of active transistors that are mounted in parallel inside the package. High powers require large transistor sizes, which translates into significant physical dimensions. For circuit design, on the other hand, a lumped model is favorable for sake of simulation speed and numerical convergence. This paper addresses questions related to reducing the equivalent...
This paper addresses an important issue regarding power-transistor packages: The mutual inductive coupling of the bondwires. Based on em simulation and analytical parameter extraction, it is shown that the mutual inductances play a key role in determining the packaged transistor performance.
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