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Modeling GaN transistors is still a matter of research. The technology is still quite young and not yet fully mature. A second issue is the fact that GaN transistors are commonly used as packaged power devices. This paper discusses modeling results obtained for different GaN devices from a small HEMT to a 60-W packaged power transistor. It is shown that the performance state-of-the art GaN HEMTs are...
Power transistors basically consist of a number of active transistors that are mounted in parallel inside the package. High powers require large transistor sizes, which translates into significant physical dimensions. For circuit design, on the other hand, a lumped model is favorable for sake of simulation speed and numerical convergence. This paper addresses questions related to reducing the equivalent...
A highly linear broadband low-noise amplifier is presented in this paper. The circuit is based on a GaN power transistor, directly bonded into a hybrid microstrip circuit. In order to achieve the highest linearity possible, a large device is used and biased in class A. Broadband low-noise operation in the range of 1.7 - 2.3 GHz is achieved, with a gain of about 15 dB and a noise figure below 2 dB,...
Recently, GaN-based low-noise amplifiers (LNAs) were shown to provide high ruggedness together with low noise figure. Since no limiter is required to protect the input, these LNAs allow for simplified receiver architectures. This paper presents an in-depth analysis of the recovery time of a highly rugged LNA. Recovery time is measured in the time domain, and an analytical approximation is developed...
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