The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
GaN low-noise amplifiers need to provide low noise figure, but are also often expected to be highly rugged. This paper addresses the question, how HEMT devices within a certain technology can be optimized only by changing basic geometrical properties. While epitaxial layer structure and gate length usually are not accessible, the circuit designer might be able to choose parameters as gate finger width...
GaN HEMT performance is still compromised by trapping effects, but no commercial circuit simulator already provides compact models that account for these effects. This work explores the capability of a standard Chalmers (Angelov) model to accurately predict the power amplifier operation of GaN HEMTs. It is shown that relying on pulsed S-parameters and by restricting the model to be valid only for...
This paper presents a highly linear X-Band low-noise amplifier. The LNA is realized in coplanar technology using the 0.25 µm GaN-HEMT MMIC process from FBH. A noise figure below 2.5 dB is measured from 7 GHz to 12 GHz together with very good input and output matching. This LNA provides a OIP3 of 28 dBm at 8 GHz, which is 8 dB above the 1 dB compression point.
Modeling GaN transistors is still a matter of research. The technology is still quite young and not yet fully mature. A second issue is the fact that GaN transistors are commonly used as packaged power devices. This paper discusses modeling results obtained for different GaN devices from a small HEMT to a 60-W packaged power transistor. It is shown that the performance state-of-the art GaN HEMTs are...
This paper addresses an important issue regarding power-transistor packages: The mutual inductive coupling of the bondwires. Based on em simulation and analytical parameter extraction, it is shown that the mutual inductances play a key role in determining the packaged transistor performance.
A highly linear broadband low-noise amplifier is presented in this paper. The circuit is based on a GaN power transistor, directly bonded into a hybrid microstrip circuit. In order to achieve the highest linearity possible, a large device is used and biased in class A. Broadband low-noise operation in the range of 1.7 - 2.3 GHz is achieved, with a gain of about 15 dB and a noise figure below 2 dB,...
Recently, GaN-based low-noise amplifiers (LNAs) were shown to provide high ruggedness together with low noise figure. Since no limiter is required to protect the input, these LNAs allow for simplified receiver architectures. This paper presents an in-depth analysis of the recovery time of a highly rugged LNA. Recovery time is measured in the time domain, and an analytical approximation is developed...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.