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Power transistors basically consist of a number of active transistors that are mounted in parallel inside the package. High powers require large transistor sizes, which translates into significant physical dimensions. For circuit design, on the other hand, a lumped model is favorable for sake of simulation speed and numerical convergence. This paper addresses questions related to reducing the equivalent...
This paper addresses an important issue regarding power-transistor packages: The mutual inductive coupling of the bondwires. Based on em simulation and analytical parameter extraction, it is shown that the mutual inductances play a key role in determining the packaged transistor performance.
This paper investigates the accuracy limitations of common compact bipolar transistor models towards higher frequencies. The device under test is a InGaP/GaAs HBT, simulated by the FBH HBT model. The results, however, analogously hold for similar bipolar devices and models. The investigation is based on an analytical approach that explains how the model approximations impact simulation accuracy. A...
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